SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 1 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 e series power mosfet features ? halogen-free according to iec 61249-2-21 definition ? low figure-of-merit (fom) r on x q g ? low input capacitance (c iss ) ? reduced switching and conduction losses ? ultra low gate charge (q g ) ? avalanche energy rated (uis) ? compliant to rohs directive 2002/95/ec applications ? server and telecom power supplies ? switch mode power supplies (smps) ? power factor correction power supplies (pfc) ?lighting - high-intensity discharge (hid) - fluorescent ballast lighting ? industrial - welding - induction heating - motor drives - battery chargers - renewable energy - solar (pv inverters) notes a. repetitive rating; puls e width limited by maximum junction temperature. b. v dd = 50 v, starting t j = 25 c, l = 28.2 mh, r g = 25 ? , i as = 5.1 a. c. 1.6 mm from case. d. i sd ? i d , di/dt = 100 a/s, starting t j = 25 c. product summary v ds (v) at t j max. 650 r ds(on) max. at 25 c ( ? )v gs = 10 v 0.18 q g max. (nc) 86 q gs (nc) 14 q gd (nc) 26 configuration single n-channel mosfet g d s d 2 pak (to-263) g d s ordering information package d 2 pak (to-263) lead (pb)-free and halogen-free SIHB22N60E-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 600 v gate-source voltage v gs 20 gate-source voltage ac (f > 1 hz) 30 continuous drain current (t j = 150 c) v gs at 10 v t c = 25 c i d 21 a t c = 100 c 13 pulsed drain current a i dm 56 linear dera ting factor 1.8 w/c single pulse avalanche energy b e as 367 mj maximum power dissipation p d 227 w operating junction and storage temperature range t j , t stg - 55 to + 150 c drain-source voltage slope t j = 125 c dv/dt 37 v/ns reverse diode dv/dt d 11 soldering recommendations (peak temperature) for 10 s 300 c c
SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 2 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 the information shown here is a preliminary product proposal, not a commercial product datasheet. vishay siliconix is not comm itted to produce this or any similar product. this information should not be used for design purpos es, nor construed as an offer to furnish or sell such products. thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -62 c/w maximum junction-to-case (drain) r thjc -0.55 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 600 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 250 a -0.71- v/c gate-source threshold voltage (n) v gs(th) v ds = v gs , i d = 250 a 2 - 4 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, v gs = 0 v, t j = 125 c - - 10 drain-source on-state resistance r ds(on) v gs = 10 v i d = 11 a - 0.15 0.18 ? forward transconductance g fs v ds = 8 v, i d = 5 a - 6.4 - s dynamic input capacitance c iss v gs = 0 v, v ds = 100 v, f = 1 mhz - 1920 - pf output capacitance c oss -90- reverse transfer capacitance c rss -6- total gate charge q g v gs = 10 v i d = 22 a, v ds = 480 v -5786 nc gate-source charge q gs -14- gate-drain charge q gd -26- turn-on delay time t d(on) v dd = 380 v, i d = 22 a, v gs = 10 v, r g = 4.7 ? -1836 ns rise time t r - 68 105 turn-off delay time t d(off) -5989 fall time t f -5481 gate input resistance r g f = 1 mhz, open drain - 0.77 - ? drain-source body diode characteristics continuous source-dra in diode current i s mosfet symbol showing the integral reverse p - n junction diode --21 a pulsed diode forward current i sm --88 diode forward voltage v sd t j = 25 c, i s = 22 a, v gs = 0 v - - 1.2 v reverse recovery time t rr t j = 25 c, i f = i s = 22 a, di/dt = 100 a/s, v r = 20 v - 460 - ns reverse recovery charge q rr -7.3-c reverse recovery current i rrm -26-a s d g
SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 3 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 0 20 40 60 80 t j = 25 c top 15 v 14 v 13 v 12 v 11 v 10 v 9 v 5 v 6 v 7 v 8 v 0 5 10 15 20 25 30 v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 10 01020 0 40 5 v 6 v 7 v top 15 v 14 v 13 v 12 v 11 v 10 v 9 v 8 v 20 30 t j = 150 c 5152530 v ds , drain-to-source voltage (v) i d , drain-to-source current (a) 40 10 010 25 60 30 20 50 5 15 20 0 t j = 25 c t j = 150 c t j , junction temperature (c) r d s (on) , drain-to- s ource 2.5 0.5 - 60 3 2 1.5 1 0 - 40 - 20 0 20 40 60 80 100 120 140 160 v gs = 10 v i d = 22 a on re s i s tance (normalized) v d s , drain-to- s ource voltage (v) capacitance (pf) 100 10 0 200 400 10 000 1 1000 100 300 500 600 c i ss c o ss c r ss v gs = 0 v, f = 1 mhz c i ss = c g s + c gd , c d s s horted c r ss = c gd c o ss = c d s + c gd q g , total g ate charge (nc) v gs , g ate-to- s ource voltage (v) 16 4 0 60 120 0 24 v d s = 480 v v d s = 300 v v d s = 120 v 20 12 8 30 90
SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 4 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical source-dra in diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain curre nt vs. case temperature fig. 10 - temperature vs. drain-to-source voltage fig. 11 - normalized thermal transient impedance, junction-to-case v s d , s ource-drain voltage (v) i s d , rever s e drain current (a) 1 0.001 0 0.4 1.0 1000 0.01 0.1 10 100 0.2 0.6 0.8 1.2 1.4 0.0001 t j = 150 c t j = 25 c v gs = 0 v v d s , drain-to- s ource voltage (v) i d , drain current (a) 0.1 1 10 100 1000 1 10 100 1000 * v gs > minimum v gs at which r d s (on) i s s pecied i dm = limited bvd ss limited operation in thi s area limited by r d s (on) 100 s 1 m s 10 m s t c = 25 c t j = 150 c s ingle pul s e limited by r d s (on) * t j , case temperature (c) i d , drain current (a) 5 10 15 20 25 25 50 75 100 125 150 0 t j , junction temperature (c) v ds , drain-to-source 675 600 - 60 0 160 725 brakdown voltage (v) 700 650 625 575 - 40 - 20 20 40 60 80 100 120 140 550 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 normalized effective tran s ient thermal impedance pul s e time ( s ) duty cycle = 0.5 0.2 0.1 0.05 0.02 s ingle pul s e
SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 5 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12 - switching time test circuit fig. 13 - switching time waveforms fig. 14 - unclamped inductive test circuit fig. 15 - unclamped inductive waveforms fig. 16 - basic gate charge waveform fig. 17 - gate charge test circuit pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
SIHB22N60E www.vishay.com vishay siliconix s11-2087 rev. b, 31-oct-11 6 document number: 91472 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 18 - for n-channel vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91472 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
document number: 91364 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix to-263ab (high voltage) notes 1. dimensioning and toler ancing per asme y14.5m-1994. 2. dimensions are shown in millimeters (inches). 3. dimension d and e do not include mold flash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimensions are me asured at the outmost extremes of the plastic body at datum a. 4. thermal pad contour optional within dimension e, l1, d1 and e1. 5. dimension b1 and c1 apply to base metal only. 6. datum a and b to be determined at datum plane h. 7. outline conforms to jedec outline to to-263ab. 5 4 1 3 l1 l2 d b b e h b a detail a a a c c2 a 2 x e 2 x b 2 2 x b 0.010 a b mm 0.004 b m base metal plating b 1, b 3 ( b , b 2) c1 (c) section b - b and c - c scale: none lead tip 4 34 (dat u m a) 2 c c b b 5 5 v ie w a - a e1 d1 e 4 4 b h seating plane ga u ge plane 0 to 8 detail ?a? rotated 90 cw scale 8 :1 l3 a1 l4 l millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 - 0.270 - a1 0.00 0.25 0.000 0.010 e 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 e1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 l2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.38 9.65 0.330 0.380 l4 4.78 5.28 0.188 0.208 ecn: s-82110-rev. a, 15-sep-08 d w g: 5970
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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